 |
|
Home |
Sessions and Keynotes |
Author's Info |
Download
Program | Social Event | Hotel | Location | Registration Committee | Sponsors | Contact | Japanese Home |
| May 22, Wednesday | ||||
| 8:30 | REGISTRATION | |||
| 9:00 | OPENING REMARKS | 22O-01 | [Keynote] Microsystem Integration and Packaging – A Chronicle of the Surface Activated Bonding and its Future Outlook;Tadatomo Suga, Meisei University, Japan | Co-Chairs: F. Fournel, E. Higurashi |
| 9:40 | SURFACE ACTIVATED BONDING (SAB) (1) |
22O-02 | Impact of Ar Atom Irradiation on the Crystallinity of GaAs/Si Interfaces Fabricated by Surface Activated Bonding at Room Temperature; Yutaka Ohno, Tohoku University, Japan | |
| 10:40 | 22O-03 | Effect of Annealing Temperature on Diamond/Si Interfacial Structure; Jianbo Liang, Osaka City University, Japan | ||
| 10:20-10:40 | BREAK | |||
| 10:40 | SURFACE ACTIVATED BONDING (SAB) (2) |
22O-04 | SiC-SiC Temporary Bonding Compatible with Rapid Thermal Annealing at 1000 ℃; Fengwen Mu, Waseda University / Meisei University, Japan | Co-Chairs: I. Radu, J. M. Song |
| 11:00 | 22O-05 | SOI Wafer Fabricated with Extra Thick Deposited BOX Layer Using Surface Activated Bonding at Room Temperature for Customized Power Devices; Yoshihiro Koga, SUMCO corp., Japan | ||
| 11:20 | 22O-06 | Tiny Integrated Laser by Room Temperature Surface Activated Bonding; Arvydas Kausas, Institute for Molecular Science, Japan | ||
| 11:40 | 22O-07 | Oxide Removal for Low-Temperature Metal Thermo-Compression Wafer Bonding; Bernhard Rebhan, EV Group, Austria | ||
| 12:00 | 22O-08 | High Yield Chip-on-Wafer Low Temperature Plasma Activated Bonding for III-V/Si Hybrid Photonic Integration; Takehiko Kikuchi, Sumitomo Electric Industries, Ltd., Japan | ||
| 12:20-12:30 | (transfer, 5 minutes' walk) | |||
| 12:30-13:40 | LUNCH <Honda no Mori> | |||
| 13:40-15:00 | SHORT PRESENTAION for POSTER (1) <Honda no Mori> | MC: N. Kawamata, H. Ishida |
||
| 15:00-16:10 | COFFEE BREAK / POSTER (1) <Honda no Mori> | |||
| 16:10-17:30 | SHORT PRESENTAION for POSTER (2) <Honda no Mori> | MC: N. Kawamata, H. Ishida |
||
| 17:30-17:40 | (transfer, 5 minutes' walk) | |||
| 17:50 | NOH STAGE | |||
| 18:30-19:00 | (transfer, 20 minutes' walk) | |||
| 19:00 | BANQUET <Gojukken Nagaya, Kanazawa Castle> | |||
| May 23, Thursday | ||||
| 8:40 | ROLES OF LOW-TEMPERATURE BONDING IN 3D AND HETERO-INTEGRATION | 23O-01 | [Keynote] Where is the Sweet Spot for Panel Level Packaging?; Tanja Braun, Fraunhofer IZM, Germany | Co-Chairs: K. Kurabayashi, L. DiCioccio |
| 9:20 | 23O-02 | Low Temperature Cu-Cu Gang Bonding for RDL-First Fan-Out Panel Level Package; Kai Ming, Yang, Unimicron Technology Corp., Taiwan | ||
| 9:40 | 23O-03 | [Invited] Robustness and Reliability Achievements for Direct Hybrid Bonding Integration: A Review; Stephane Moreau, Univ. Grenoble Alpes, CEA, LETI, France | ||
| 10:00 | 23O-04 | Effect of N2 Plasma Treatment in Cu/SiO2 Hybrid Bonding Using Ultra-Thin Manganese Film; Kazumichi Tsumura, Toshiba Corporation, Japan | ||
| 10:20-10:40 | COFFEE BREAK | |||
| 10:40 | FUNDAMENTALS OF NANO-BONDING | 23O-05 | [Invited] Room Temperature GaN-Si Bonding via an Intermediate Atomic-Layer-Deposition Al2O3 Layer by Using O Ion Beam; Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences, China | Co-Chairs: K. H. Lee, T. Shimatsu |
| 11:00 | 23O-06 | Pre-bonding Characterization of SiCN Enabled Wafer Stacking; Lan Peng, IMEC, Belgium | ||
| 11:20 | 23O-07 | Defect Identification in Bonding Surface Layers by Positron Annihilation Spectroscopy; Fumihiro Inoue, IMEC, Belgium | ||
| 11:40-11:50 | (transfer, 5 minutes' walk) | |||
| 11:50-13:00 | LUNCH <Honda no Mori> | |||
| 13:00-13:50 | POSTER (2) <Honda no Mori> | |||
| 13:50-14:00 | (transfer, 5 minutes' walk) | |||
| 14:00 | BONDING TECHNOLOGIES FOR 3D INTEGRATION (1) | 23O-08 | [Keynote] Die to Wafer Direct Bonding: From Fundamental Mechanisms to Optoelectronic and 3D Applications; Frank Fournel, CEA-LETI, France | Co-Chairs: G.-Q. Lu, S. Moreau |
| 14:40 | 23O-09 | Multichip Thinning Technology with Temporary Bonding for Multichip-to-Wafer 3D Integration; Sungho Lee, Tohoku University, Japan | ||
| 15:00 | 23O-10 | [Invited] Die to Die High Yield DBI Assembly for True 3D Interconnect;Belgacem Haba, Xperi corp., USA | ||
| 15:20-15:40 | COFFEE BREAK | |||
| 15:40 | POWER APPLICATIONS AND SOLDER BONDING | 23O-11 | [Invited] Low-Temperature Silver Sintering for Bonding 3D Power Modules; Guo-Quan Lu, Virginia Tech, USA | Co-Chairs: T. Braun, M. Howlader |
| 16:00 | 23O-12 | [Invited] Wafer Bonding, A Key Stage For Power Devices; Lea Di Cioccio, Univ. Grenoble Alpes, CEA, LETI, France | ||
| 16:20 | 23O-13 | Impact of Emitter Thermal Shunt for InP-based Double-Heterojunction Bipolar Transistors on SiC Substrate; Yuta Shiratori, NTT Corporation, Japan | ||
| 16:40 | 23O-14 | Room Temperature Bonding of GaN on Diamond by Using Mo/Au Nano-Adhesion Layer; Kang Wang, Xi'an Jiaotong University, China | ||
| 17:00 | 23O-15 | [Invited] Thermodynamic and Kinetic Effects on Microstructure Evolution in Hybrid Low Temperature Solder/High-Sn Solder Joints; Yaohui Fan, Purdue University, USA | ||
| 17:20 | 23O-16 | [Invited] Low Temperature Soldering: Enabling Advancements in Packaging; Morgana de Avila Ribas, MacDermid Alpha Electronics Solutions, India | ||
| 17:40 | 23O-17 | Precise Control of Electroplated 3D Solder Bumps for MEMS Packaging Applications; Ji Fan, Huazhong University of Science and Technology, China | ||
| 18:00-19:00 | (transfer, 20 minutes' walk) | |||
| 19:00 | CONFERENCE RECEPTION <Tokyu Hotel> | |||
| May 24, Friday | ||||
| 08:20 | LOW-TEMPERATURE BONDING FOR MEMS AND MICRO-FLUIDIC DEVICES | 24O-01 | [Keynote] Flexible Sensors – Materials, Interfaces and Surfaces; Jamal Deen, McMaster University, Canada | Co-Chairs: W.-P. Dow, B. Corbett |
| 09:00 | 24O-02 | [Invited] System Integration of Nanostructured Materials for Point-of-Care Immune BiosensingYounggeun Park, University of Michigan, USA | ||
| 09:20 | 24O-03 | Wafer Level Low Temperature Bonding of Industrial Glass Substrates for Life Science; Anke Sanz-Velasco, IMT Masken und Teilungen AG, Switzerland | ||
| 09:40 | 24O-04 | Adhesive Wafer Bonding for CMOS Based Lab-on-a-Chip Devices; Werner J. Karl, X-FAB MEMS Foundry Itzehoe GmbH, Germany | ||
| 10:00 | 24O-05 | Low Temperature Covalent Wafer Bonding for X-Ray Imaging Detectors; Nasser Razek, G-Ray Medical & Industries, Switzerland | ||
| 10:20-10:40 | COFFEE BREAK | |||
| 10:40 | BONDING TECHNOLOGIES FOR HETERO-INTEGRATION | 24O-06 | [Invited] Heterogeneous Material Integration and Manufacturing Using Wafer Bonding Technology; Ionut Radu, SOITEC, France | Co-Chairs: C. Chen, H. Takagi |
| 11:00 | 24O-07 | Ohmic InP/Si Direct Bonding; Ryuichi Inoue, Kyoto University, Japan | ||
| 11:20 | 24O-08 | High Bonding Yield and Brighter Integrated GaN LED and Si-CMOS; Kwang Hong Lee, Singapore-MIT Alliance for Research & Technology, Singapore | ||
| 11:40 | 24O-09 | [Invited] Micro-Transfer-Printing for Heterogeneous Integration;Brian Corbett, Tyndall National Institute, Ireland | ||
| 12:00 | 24O-10 | [Invited] Integration of Two-Dimensional Materials: Recent Advances and Challenges;Matiar Howlader, McMaster University, Canada | ||
| 12:20-13:50 | LUNCH | |||
| 13:50 | BONDING TECHNOLOGIES FOR 3D INTEGRATION (2) | 24O-11 | [Invited] Electroplated Cu Bump with Ultra-Large Grain Without Thermal Annealing and Kirkendall Void at the Interface of Cu/Sn Joint; Wei-Ping Dow, National Chung Hsing University, Taiwan | Co-Chairs: C. Handwerker, T. Gregorich |
| 14:10 | 24O-12 | Microstructural Effects on Electrodeposited Copper Direct Bonding; Jenn-Ming Song, National Chung Hsing University, Taiwan | ||
| 14:30 | 24O-13 | [Invited] Low-Temperature Cu-to-Cu Direct Bonding Enabled by Highly (111)-Oriented and Nanotwinned Cu; Chih Chen, National Chiao Tung Univ., Taiwan | ||
| 14:50 | 24O-14 | Low Temperature Direct Bonding of Nanotwinned Ag Thin Films; Fan-Yi Ouyang, National Tsing Hua University, Taiwan | ||
| 15:10 | 24O-15 | Light Enhanced Cu to Cu Bonding with Different Electromagnetic Radiations; Yung-Da Chiu, Advanced Semiconductor Engineering Group, Taiwan | ||
| 15:30 | 24O-16 | Study on Role of Inserted Pt Intermediate Layer Deposited by Atomic Layer Deposition for Cu-Cu Quasi-Direct Bonding; Kosuke Yamada, Waseda University, Japan | ||
| 15:50-16:10 | COFFEE BREAK | |||
| 16:10 | CHARACTERIZATION AND EMERGING TECHNOLOGIES | 24O-17 | [Keynote] Non-Destructive Characterization of Advanced IC Packages with Buried Features Using 3D X-Ray; Thomas Gregorich, Carl Zeiss SMT Inc., USA | Co-Chairs: J. Deen, N. Hosoda |
| 16:50 | 24O-18 | [Keynote] Attachment and Anti-Attachment Structures in Plants as Concept Generators for Bioinspired Technical Materials Systems; Thomas Speck, University of Freiburg, Germany | ||
| 17:30 | AWARDS | Presenter: H. Takagi |
||
| 17:50 | CLOSING REMARKS | Presenter: T. Suga |
||
| SHORT PRESENTAION for Poster (1) <Honda no Mori> | ||||
| 13:40-15:00 May 22 |
BONDING TECHNOLOGIES FOR 3D AND HETERO-INTEGRATION | 22P-01 | Wafer-Level Hybrid Bonding for Cu/Interlayer-Dielectric Bonding; Masahisa Fujino, AIST, Japan | MC: N. Kawamata, H. Ishida |
| 22P-02 | Triple-Stacked Wafer-to-Wafer Hybrid Bonding for 3D Structured Image Sensors; Yuki Honda, NHK Science and Technology Research Laboratories, Japan | |||
| 22P-03 | Evaluation of Adhesive Fracture Energy of Polyimide Interlayer Dielectric Film for Redistribution Layer of Semiconductor Package; Kenta Ono, Graduate School of Shibaura Institute of Technology, Japan | |||
| 22P-04 | Cure Shrinkage Behavior Analysis in Ultraviolet Curable Adhesive Using Finite Element Method; Yuga Sato, Graduate School of Shibaura Institute of Technology, Japan | |||
| 22P-05 | Fatigue Life Prediction of BGA Solder Joint with Consideration of Microstructural Coarsening; Kouichi Moroka, Graduate School of Shibaura Institute of Technology, Japan | |||
| 22P-06 | Effect of Nitride Passivation on Cu Surface for Low Temperature Cu-to-Cu Bonding; Haesung Park, Seoul National University of Science and Technology, Korea | |||
| 22P-07 | Copper Direct Bonding with Short Time and Excellent Electrical Property by <111>-Oriented Nano-Twinned Copper; Kai Cheng Shie, National Chiao Tung University, Taiwan | |||
| 22P-08 | Low Temperature Cu-to-Cu Direct Bonding with Thin Gold Capping on Highly-Orientated Nanotwinned Cu Films; Fu-Chain Chen, National Chiao Tung University, Taiwan | |||
| 22P-09 | Low Temperature Au-Au Direct Bonding with Highly <111>-Oriented Au films; Wei-You Hsu, National Chiao Tung University, Taiwan | |||
| 22P-10 | Low Temperature All-Cu Bonding via Cu-Nanoparticle Paste Sintering in Pt-Catalyzed Formic Acid Vapor; Fengwen Mu, Waseda University / Meisei University, Japan | |||
| 22P-11 | Low Temperature Copper-Copper Bonding in Ambient Air Using Hydrogen Radical Pretreatment; Seongbin Shin, The University of Tokyo, Korea | |||
| SURFACE ACTIVATED BONDING (SAB) | 22P-12 | Artifacts in the Structural Analysis of SAB-Fabricated Interfaces by Using Focused Ion Beam; Yutaka Ohno, Tohoku University, Japan | ||
| 22P-13 | Atom Probe Tomography of GaAs Homointerfaces Fabricated by Surface-Activated Bonding; Yasuo Shimizu, Tohoku University, Japan | |||
| 22P-14 | Fabrication of Diamond/Cu Direct Bonding for Power Device Application; Shinji Kanda, Osaka City University, Japan | |||
| 22P-15 | Electrical Properties of p+-GaAs//Patterned Metal Layer/n+-Si Junctions; Takashi Hishida, Osaka City University, Japan | |||
| 22P-16 | Bonding Strength Evaluation of Al Foil/AlN Junctions by Surface Activated Bonding; Shotaro Horikawa, Osaka City University, Japan | |||
| 22P-17 | A Polyimide Film/Aluminum Foil Junction by Modified Surface Activated Bonding; Hidemasa Akazawa, Osaka City University, Japan | |||
| 22P-18 | Lithium Niobate-on-Insulator Waveguide on Si Substrate Fabricated by Room Temperature Bonding; Ryo Takigawa, Kyushu University, Japan | |||
| 22P-19 | Room-Temperature Pressureless Wafer Sealing Using Ultrathin Au Films Activated by Ar Plasma; Michitaka Yamamoto, The University of Tokyo, Japan | |||
| ATOMIC DIFFUSION BONDING (ADB) | 22P-20 | Oxidation of Bonded Thin Ti Films Using Oxide Underlayers in Atomic Diffusion Bonding Process for Optical Applications; Gen Yonezawa, Sony Corp., Japan | ||
| 22P-21 | Novel Sputter Film Deposition to Fabricate Thick Films with Extremely Smooth Surface Suitable for Room Temperature Bonding; Takayuki Saito, Canon Anelva Corporation, Japan | |||
| 22P-22 | Atomic Diffusion Bonding of Wafers Using Thin Nb Films; Miyuki Uomoto, Tohoku University, Japan | |||
| 22P-23 | Atomic Diffusion Bonding of Wafers using a-Ge Films with Extremely Low Electrical Conductivity; Arina Muraoka, Tohoku University, Japan | |||
| 22P-24 | Rearrangement of Crystal Lattice Occurred at Ag/Ag Bonded Interface in Atomic Diffusion Bonding; Shigenobu Matsuda, Tohoku University, Japan | |||
| SHORT PRESENTAION for Poster (2) <Honda no Mori> | ||||
| 16:10-17:30 May 22 |
RELATED TECHNOLOGIES FOR LOW-TEMPERATURE BONDING | 22P-25 | Leading Edge Review: What Is an Important Factor of CMP Consumables for 3D Integration Bonding?; Michio Uneda, Kanazawa Institute of Technology, Japan | MC: N. Kawamata, H. Ishida |
| 22P-26 | III-Nitride Epitaxy by Ion Filtered Inductively Coupled Plasma MOCVD; Yi Luo, Tsinghua University, China | |||
| NEW PROCESS FOR LOW-TEMPERATURE BONDING | 22P-27 | Hydrophilic Direct Bonding of monocrystalline (111) Diamond Substrate onto Si Wafer; Takashi Matsumae, AIST, Japan | ||
| 22P-28 | Plasma-Activated Direct Bonding of Coated Optical Glasses; Pascal Birckigt, Fraunhofer Institute for Applied Optics and Precision Engineering, Germany | |||
| 22P-29 | Wavelength-Conversion Material-Mediated Semiconductor Bonding; Kodai Kishibe, Kyoto University, Japan | |||
| 22P-30 | Solution-Process ZnO-Mediated Semiconductor Bonding; Tatsushi Yamashita, Kyoto University, Japan | |||
| 22P-31 | Hydrogel-Mediated Semiconductor Bonding; Kodai Kishibe, Kyoto University, Japan | |||
| 22P-32 | Low Temperature Polyimide-to-Polyimide Direct Bonding; Hong-Che Liu, National Chiao Tung University, Taiwan | |||
| MEMS FOR POWER APPLICATIONS | 22P-33 | Sweat Glucose Sensing by Directly Bonded Thin Films; Maksud Alam, McMaster University, Canada | ||
| 22P-34 | Novel Gratings for Astronomical Observations Fabricated by Latest Technologies; Noboru Ebizuka, Riken, Japan | |||
| 22P-35 | Evaluation of Au-Au Bonding After Annealing for Getter Activation -Fabrication of All-Sapphire Cs Gas Cell for Miniature Atomic Clock-; Yuichi Kurashima, AIST, Japan | |||
| 22P-36 | Stacking 4” Si Wafer with Parallel 3-Stepped Micro-Trenches to Deposit Superconducting Material for Magnetic Energy Storage; Minoru Sasaki, Toyota Technological Institute, Japan | |||
| 22P-37 | Deformation Behavior of Pressurized Sintered Ag Nanoparticles in Discrete Type Power Semiconductor Device; Kiichi Nagata, Graduate School of Shibaura Institute of Technology, Japan | |||
| 22P-38 | High Temperature Fatigue Crack Propagation Characteristics of Pressureless Sintered Silver Nanoparticles; Koji Osaki, Graduate School of Shibaura Institute of Technology, Japan | |||
| 22P-39 | Fracture Analysis of Vertical Direction Crack in Die Attach Joint for Power Semiconductor Device; Hiroshige Sugimoto, Graduate School of Shibaura Institute of Technology, Japan | |||
| SURFACE ACTIVATED BONDING (SAB) | 22P-40 | Low Temperature Wafer Bonding with Gas Cluster Ion Beams; Noriaki Toyoda, University of Hyogo, Japan | ||
| 22P-41 | Room-Temperature Wafer Bonding with Titanium Thin Films Based on Formation of Ti/Si Amorphous Layers; Eiji Higurashi, AIST, Japan | |||
| 22P-42 | Room Temperature Bonding of Quartz Glass Using Aluminum Oxide Intermediate Layer; Kai Takeuchi, The University of Tokyo, Japan | |||
| 22P-43 | Room Temperature SiC Wafer Bonding Using SAB Methods; Fengwen Mu, Waseda University / Meisei University, Japan | |||
| 22P-44 | GaN-SiC and GaN-diamond integration via room temperature bonding; Fengwen Mu, Waseda University / Meisei University, Japan | |||
| 22P-45 | The Integration of Ga2O3 on SiC at Room Temperature by Surface Activated Bonding Method; Yang Xu, Institute of Microelectronics of Chinese Academy of Sciences, China | |||
| 22P-46 | Analysis of SiC/Si Bonding Interface with Thermal Annealing Treatment by XPS; Zexin Wan, Osaka City University, Japan | |||
| 22P-47 | Directly Bonded n+-InGaP/n+-Si Junctions with a Low Interface Resistance; Moritake Sakihara, Osaka City University, Japan | |||
